EM6K6T2R

new-10%

Manufacturer part number:EM6K6T2R

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 20V 0.3A EMT6

Case Package:SOT-23

Datasheet:EM6K6T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Subcategory	FET General Purpose Power
Max Power Dissipation	150mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*K6
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 300mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.3A
Drain-source On Resistance-Max	1.4Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free