SI1900DL-T1-GE3

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Manufacturer part number:SI1900DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET Dual 30V N-CH TRENCH

Case Package:SOT-23

Datasheet:SI1900DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	300mW 270mW
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	480m Ω @ 590mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	630mA Ta 590mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	0.59A
Drain-source On Resistance-Max	0.48Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	0.3W
FET Feature	Standard
RoHS Status	Non-RoHS Compliant