HP8M31TB1

new-10%

Manufacturer part number:HP8M31TB1

Manufacturer:ROHM Semiconductor

Description:HP8M31TB1 IS LOW ON-RESISTANCE A

Case Package:SOT-23

Datasheet:HP8M31TB1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	3W Ta
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 8.5A, 10V, 70m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	470pF 2300pF @ 30V
Current - Continuous Drain (Id) @ 25°C	8.5A Ta
Gate Charge (Qg) (Max) @ Vgs	12.3nC, 38nC @ 10V
Drain to Source Voltage (Vdss)	60V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max	0.073Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	5.4 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant