QH8MA4TCR

new-10%

Manufacturer part number:QH8MA4TCR

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 30V TSMT8

Case Package:SOT-23

Datasheet:QH8MA4TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	1.5W
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9A 8A
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 10V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	8A
Drain-source On Resistance-Max	0.016Ohm
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	3.5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant