QS5K2TR

new-10%

Manufacturer part number:QS5K2TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 30V 2A TSMT5

Case Package:SOT-23

Datasheet:QS5K2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-5 Thin, TSOT-23-5
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	100MOhm
Terminal Finish	TIN SILVER COPPER
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*K2
Pin Count	5
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	8 ns
FET Type	2 N-Channel (Dual) Common Source
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 4.5V
Rise Time	10ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	8A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.5 V
Height	850μm
Length	2.9mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free