FDS6984AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDS6984AS Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
PowerTrench®, SyncFET™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
32MOhm
Max Power Dissipation
2W
Number of Elements
2
Power Dissipation
2W
Power - Max
900mW
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
31m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
420pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.5A 8.5A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
6ns
Fall Time (Typ)
2 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
8.5A
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Logic Level Gate
Height
1.5mm
Length
5mm
Width
3.99mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.116000
$6.116
10
$5.769811
$57.69811
100
$5.443218
$544.3218
500
$5.135112
$2567.556
1000
$4.844445
$4844.445
FDS6984AS Product Details
FDS6984AS Description
The FDS6984AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6984AS contains two unique 30V, N-channel, logic level, and power slot MOSFET designed to maximize power conversion efficiency.The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes a patented combination of MOSFET and Schottky diode monolithic integration.
FDS6984AS Features
Q2
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
Max. RDS(on) = 20 mΩ at VGS = 10 V
Max. RDS(on) = 28 mΩ at VGS = 4.5 V
Q1
Optimized for Low Switching Losses
5.5A, 30V
Max. RDS(on) = 31 mΩ at VGS = 10 V
Max. RDS(on) = 40 mΩ at VGS = 4.5 V
Low gate charge (8nC typical)
RoHS Compliant
FDS6984AS Applications
This product is general usage and suitable for many different applications.