QS6J1TR

new-10%

Manufacturer part number:QS6J1TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 20V 1.5A TSMT6

Case Package:SOT-23

Datasheet:QS6J1TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	340MOhm
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-1.5A
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*J1
Pin Count	6
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	10 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	215m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	3nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	1.5A
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	6A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free