QS8J1TR

new-10%

Manufacturer part number:QS8J1TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 12V 4.5A TSMT8

Case Package:SOT-23

Datasheet:QS8J1TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Subcategory	Other Transistors
Max Power Dissipation	1.25W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*J1
Pin Count	8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	12 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2450pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	31nC @ 4.5V
Rise Time	75ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	215 ns
Turn-Off Delay Time	390 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.029Ohm
Drain to Source Breakdown Voltage	-12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free