QS8M51TR

new-10%

Manufacturer part number:QS8M51TR

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 100V 2A/1.5A TSMT8

Case Package:SOT-23

Datasheet:QS8M51TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	1.5W
Terminal Position	DUAL
Base Part Number	*M51
Pin Count	8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	325m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A 1.5A
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 5V
Drain to Source Voltage (Vdss)	100V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.355Ohm
Pulsed Drain Current-Max (IDM)	6A
DS Breakdown Voltage-Min	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free