QSX4TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
QSX4TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
QSX
Pin Count
6
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
2A
Transition Frequency
280MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.243762
$1.243762
10
$1.173360
$11.7336
100
$1.106943
$110.6943
500
$1.044286
$522.143
1000
$0.985176
$985.176
QSX4TR Product Details
QSX4TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.A VCE saturation (Max) of 370mV @ 75mA, 1.5A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 280MHz.A maximum collector current of 2A volts can be achieved.
QSX4TR Features
the DC current gain for this device is 270 @ 200mA 2V the vce saturation(Max) is 370mV @ 75mA, 1.5A the emitter base voltage is kept at 6V a transition frequency of 280MHz
QSX4TR Applications
There are a lot of ROHM Semiconductor QSX4TR applications of single BJT transistors.