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QSX4TR

QSX4TR

QSX4TR

ROHM Semiconductor

QSX4TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

QSX4TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation1.25W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number QSX
Pin Count6
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product280MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage30V
Current - Collector (Ic) (Max) 2A
Transition Frequency 280MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2038 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.243762$1.243762
10$1.173360$11.7336
100$1.106943$110.6943
500$1.044286$522.143
1000$0.985176$985.176

QSX4TR Product Details

QSX4TR Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.A VCE saturation (Max) of 370mV @ 75mA, 1.5A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 280MHz.A maximum collector current of 2A volts can be achieved.

QSX4TR Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz

QSX4TR Applications


There are a lot of ROHM Semiconductor QSX4TR applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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