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IXFP36N30P3

IXFP36N30P3

IXFP36N30P3

IXYS

MOSFET N-CH 300V 36A TO220

SOT-23

IXFP36N30P3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
Series HiPerFET™, Polar3™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 347W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 36A
RoHS StatusROHS3 Compliant
In-Stock:2071 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$2.83500$141.75

About IXFP36N30P3

The IXFP36N30P3 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 300V 36A TO220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFP36N30P3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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