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IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

SOT-23

IPB80N06S2L11ATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 158W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 158W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 93μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0147Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 280 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.517282 $6.517282
10 $6.148379 $61.48379
100 $5.800358 $580.0358
500 $5.472036 $2736.018
1000 $5.162298 $5162.298

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