R5207ANDTL

new-10%

Manufacturer part number:R5207ANDTL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 10V DRIVE CPT

Case Package:SOT-23

Datasheet:R5207ANDTL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Copper (Sn98Cu2)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	22ns
Drain to Source Voltage (Vdss)	525V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	1Ohm
Pulsed Drain Current-Max (IDM)	28A
DS Breakdown Voltage-Min	525V
Height	2.3mm
Length	6.5mm
Width	5.5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free