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IRFP440PBF

IRFP440PBF

IRFP440PBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 850mOhm @ 5.3A, 10V ±20V 1300pF @ 25V 63nC @ 10V 500V TO-247-3

SOT-23

IRFP440PBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 850mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 8.8A
Lead Pitch 5.45mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 8.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Input Capacitance 1.3nF
Drain to Source Resistance 850mOhm
Rds On Max 850 mΩ
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.40000 $3.4
25 $2.74400 $68.6
100 $2.46960 $246.96
500 $1.92076 $960.38
1,000 $1.59149 $1.59149
2,500 $1.48173 $2.96346
5,000 $1.42685 $7.13425
IRFP440PBF Product Details

IRFP440PBF Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.8A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [49 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 850mOhm.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFP440PBF Features


a continuous drain current (ID) of 8.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IRFP440PBF Applications


There are a lot of Vishay Siliconix
IRFP440PBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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