IPI110N20N3GAKSA1

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IPI110N20N3GAKSA1

Manufacturer part number:IPI110N20N3GAKSA1

Manufacturer:Infineon Technologies

Description:IPI110N20N3GAKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPI110N20N3GAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 88A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	88A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Pulsed Drain Current-Max (IDM)	352A
Avalanche Energy Rating (Eas)	560 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead