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R6009KNX

R6009KNX

R6009KNX

ROHM Semiconductor

N-Channel Bulk 535m Ω @ 2.8A, 10V ±20V 540pF @ 25V 16.5nC @ 10V 600V TO-220-3 Full Pack

SOT-23

R6009KNX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 535m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 9A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 27A
DS Breakdown Voltage-Min 600V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.452800 $6.4528
10 $6.087547 $60.87547
100 $5.742969 $574.2969
500 $5.417895 $2708.9475
1000 $5.111222 $5111.222
R6009KNX Product Details

R6009KNX Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 540pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.Pulsed drain current is maximum rated peak drain current 27A.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6009KNX Features


a continuous drain current (ID) of 9A
based on its rated peak drain current 27A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


R6009KNX Applications


There are a lot of ROHM Semiconductor
R6009KNX applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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