R6012ANX

new-10%

Manufacturer part number:R6012ANX

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 600V 12A TO-220FM

Case Package:SOT-23

Datasheet:R6012ANX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2012
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	ISOLATED
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	420m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	0.265 mJ
Height	15.4mm
Length	10.3mm
Width	4.8mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant