R6012FNJTL

new-10%

Manufacturer part number:R6012FNJTL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 600V 12A LPT

Case Package:SOT-23

Datasheet:R6012FNJTL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Package / Case	SC
Number of Pins	83
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2013
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Max Power Dissipation	50W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Continuous Drain Current (ID)	12A
Drain-source On Resistance-Max	0.51Ohm
Pulsed Drain Current-Max (IDM)	48A
Input Capacitance	1.3nF
Avalanche Energy Rating (Eas)	9.6 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Rds On Max	510 mΩ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free