R6050JNZC17

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Manufacturer part number:R6050JNZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 83m Ω @ 25A, 15V ±30V 4500pF @ 100V 120nC @ 15V 600V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6050JNZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	120W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	83m Ω @ 25A, 15V
Vgs(th) (Max) @ Id	7V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 100V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 15V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	15V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$9.430411	$9.430411
10	$8.896614	$88.96614
100	$8.393032	$839.3032
500	$7.917955	$3958.9775
1000	$7.469768	$7469.768

R6050JNZC17 Overview

A device's maximal input capacitance is 4500pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (15V).