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R6515ENZC8

R6515ENZC8

R6515ENZC8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 315m Ω @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6515ENZC8 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 315m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.315Ohm
Pulsed Drain Current-Max (IDM) 45A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 284 mJ
RoHS Status ROHS3 Compliant
R6515ENZC8 Product Details

R6515ENZC8 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 284 mJ.A device's maximum input capacitance is 910pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 15A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 45A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 650V.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

R6515ENZC8 Features


the avalanche energy rating (Eas) is 284 mJ
based on its rated peak drain current 45A.
a 650V drain to source voltage (Vdss)


R6515ENZC8 Applications


There are a lot of ROHM Semiconductor
R6515ENZC8 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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