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FDMS8660S

FDMS8660S

FDMS8660S

ON Semiconductor

FDMS8660S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS8660S Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 40A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 83W Tc
Power Dissipation 83W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4345pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
FDMS8660S Product Details

FDMS8660S Description

The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.



FDMS8660S Features 

Max rDS(on) = 2.4m? at VGS = 10V, ID = 25A

Max rDS(on) = 3.5m? at VGS = 4.5V, ID = 21A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

RoHS Compliant



FDMS8660S Applications

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/ GPU low-side switch

Networking Point of Load low-side switch

Telecom secondary side rectification





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