FDMS8660S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMS8660S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
40A
Number of Elements
1
Power Dissipation-Max
2.5W Ta 83W Tc
Power Dissipation
83W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4345pF @ 15V
Current - Continuous Drain (Id) @ 25°C
25A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs
113nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
76 ns
Continuous Drain Current (ID)
25A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FDMS8660S Product Details
FDMS8660S Description
The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS8660S Features
Max rDS(on) = 2.4m? at VGS = 10V, ID = 25A
Max rDS(on) = 3.5m? at VGS = 4.5V, ID = 21A
Advanced Package and Silicon combination for low rDS(on) and high efficiency