SI1002R-T1-GE3

new-10%

Manufacturer part number:SI1002R-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 610MA SC75A

Case Package:SOT-23

Datasheet:SI1002R-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mounting Type	Surface Mount
Package / Case	SC-75A
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	560mOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	220mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	560m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 15V
Current - Continuous Drain (Id) @ 25°C	610mA Ta
Gate Charge (Qg) (Max) @ Vgs	2nC @ 8V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
DS Breakdown Voltage-Min	30V
RoHS Status	RoHS Compliant