R6520KNZC17

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Manufacturer part number:R6520KNZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 205m Ω @ 9.5A, 10V ±20V 1.55nF @ 25V 40nC @ 10V 650V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6520KNZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	68W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	205m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 630μA
Input Capacitance (Ciss) (Max) @ Vds	1.55nF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$5.217000	$5.217
10	$4.921698	$49.21698
100	$4.643111	$464.3111
500	$4.380294	$2190.147
1000	$4.132353	$4132.353

R6520KNZC17 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.55nF @ 25V maximal input capacitance.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).