2SJ668(TE16L1,NQ)

new-10%

Manufacturer part number:2SJ668(TE16L1,NQ)

Manufacturer:Toshiba Semiconductor and Storage

Description:TOSHIBA - 2SJ668(TE16L1,NQ) - MOSFET, P-KANAL, 5A, 60V, DPAK

Case Package:SOT-23

Datasheet:2SJ668(TE16L1,NQ) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Published	2010
Series	U-MOSIII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	20W Tc
Power Dissipation	20W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	170m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Dual Supply Voltage	60V
Nominal Vgs	2 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free