R6535KNZC17

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Manufacturer part number:R6535KNZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 115m Ω @ 18.1A, 10V ±20V 3nF @ 25V 72nC @ 10V 650V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6535KNZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	102W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	115m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id	5V @ 1.21mA
Input Capacitance (Ciss) (Max) @ Vds	3nF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$6.971000	$6.971
10	$6.576415	$65.76415
100	$6.204165	$620.4165
500	$5.852986	$2926.493
1000	$5.521685	$5521.685

R6535KNZC17 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3nF @ 25V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).