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RDN050N20FU6

RDN050N20FU6

RDN050N20FU6

ROHM Semiconductor

MOSFET N-CH 200V 5A TO-220FN

SOT-23

RDN050N20FU6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
Power Dissipation 30W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 720m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 292pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 5A
Drain to Source Breakdown Voltage 200V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $0.78470 $392.35

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