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RDN050N20FU6

RDN050N20FU6

RDN050N20FU6

ROHM Semiconductor

MOSFET N-CH 200V 5A TO-220FN

SOT-23

RDN050N20FU6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature150°C TJ
PackagingBulk
Published 2006
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
Power Dissipation30W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 720m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 292pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 5A
Drain to Source Breakdown Voltage 200V
RoHS StatusROHS3 Compliant
In-Stock:4181 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$0.78470$392.35

About RDN050N20FU6

The RDN050N20FU6 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 5A TO-220FN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RDN050N20FU6, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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