RE1C002UNTCL

new-10%

Manufacturer part number:RE1C002UNTCL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 20V 0.2A EMT3

Case Package:SOT-23

Datasheet:RE1C002UNTCL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	150mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 100mA, 2.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Drive Voltage (Max Rds On,Min Rds On)	1.2V 2.5V
Vgs (Max)	±8V
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.2A
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	850μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free