RGT16BM65DTL datasheet pdf and Transistors - IGBTs - Single product details from ROHM Semiconductor stock available on our website
SOT-23
RGT16BM65DTL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
94W
Reverse Recovery Time
42ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
16A
Test Condition
400V, 8A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 8A
IGBT Type
Trench Field Stop
Gate Charge
21nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
13ns/33ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.21000
$2.21
500
$2.1879
$1093.95
1000
$2.1658
$2165.8
1500
$2.1437
$3215.55
2000
$2.1216
$4243.2
2500
$2.0995
$5248.75
RGT16BM65DTL Product Details
RGT16BM65DTL Description
The RGT16BM65DTL is a 5µs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT. Insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware. High-voltage, high-current applications are suited for IGBTs.
RGT16BM65DTL Features
Short Circuit Withstand Time 5µs
Built in Very Fast & Soft Recovery FRD (RFN-Series)