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RGT16BM65DTL

RGT16BM65DTL

RGT16BM65DTL

ROHM Semiconductor

RGT16BM65DTL datasheet pdf and Transistors - IGBTs - Single product details from ROHM Semiconductor stock available on our website

SOT-23

RGT16BM65DTL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 94W
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 16A
Test Condition 400V, 8A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
IGBT Type Trench Field Stop
Gate Charge 21nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 13ns/33ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.21000 $2.21
500 $2.1879 $1093.95
1000 $2.1658 $2165.8
1500 $2.1437 $3215.55
2000 $2.1216 $4243.2
2500 $2.0995 $5248.75
RGT16BM65DTL Product Details

RGT16BM65DTL Description


The RGT16BM65DTL is a 5µs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT. Insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware. High-voltage, high-current applications are suited for IGBTs.



RGT16BM65DTL Features


  • Short Circuit Withstand Time 5µs

  • Built in Very Fast & Soft Recovery FRD (RFN-Series)

  • Pb-free Lead Plating; RoHS Compliant

  • Low Collector-Emitter Saturation Voltage

  • Low Switching Loss



RGT16BM65DTL Applications


  • Power Conditioner

  • Welder

  • General Inverter

  • UPS


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