STGW40H120F2 Description

IGBTs with the STGW40H120F2 field-stop structure were developed using a proprietary trench gate field-stop structure. These IGBTs are part of the H series of IGBTs, which provide the best compromise between conduction and switching losses for high switching frequency converter efficiency. Furthermore, a slightly positive VCE(sat) temperature coefficient and a highly tight parameter distribution make paralleling safer.

STGW40H120F2 Features

• Safe paralleling

• Minimized tail current

• Low thermal resistance

• High-speed switching series

• VCE(sat) = 2.1 V (Typ.) @ IC = 40 A

• Maximum junction temperature: TJ = 175 °C

• 5 μs minimum short-circuit withstand time at TJ = 150 °C

STGW40H120F2 Applications

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High-frequency converters

• Uninterruptible power supply