RJ1U330AAFRGTL

new-10%

Manufacturer part number:RJ1U330AAFRGTL

Manufacturer:ROHM Semiconductor

Description:NCH 250V/33A POWER MOSFET

Case Package:SOT-23

Datasheet:RJ1U330AAFRGTL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Manufacturer Package Identifier	LPT(S)
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	211W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	211W
Case Connection	DRAIN
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Ta
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Avalanche Energy Rating (Eas)	74.8 mJ
Max Junction Temperature (Tj)	150°C
Height	5mm
RoHS Status	ROHS3 Compliant