TK14C65W,S1Q

new-10%

Manufacturer part number:TK14C65W,S1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 650V 13.7A I2PAK

Case Package:SOT-23

Datasheet:TK14C65W,S1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	I2PAK
Weight	2.387001g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2015
Series	DTMOSIV
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	130W Tc
Element Configuration	Single
Turn On Delay Time	60 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 690μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 300V
Current - Continuous Drain (Id) @ 25°C	13.7A Ta
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	13.7A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.3nF
Drain to Source Resistance	220mOhm
Rds On Max	250 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant