2SK3906(Q)

new-10%

Manufacturer part number:2SK3906(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 20A TO-3PN

Case Package:SOT-23

Datasheet:2SK3906(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Power Dissipation	150W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	330m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Dual Supply Voltage	600V
Nominal Vgs	4 V
Height	19mm
Length	15.9mm
Width	4.8mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free