FCD4N60TM_WS

new-10%

Manufacturer part number:FCD4N60TM_WS

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 3.9A DPAK

Case Package:SOT-23

Datasheet:FCD4N60TM_WS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	D-Pak
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Base Part Number	FCD4N60
Power Dissipation-Max	50W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.9A Tc
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V