RZM002P02T2L

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Manufacturer part number:RZM002P02T2L

Manufacturer:ROHM Semiconductor

Description:MOSFET P-CH 20V 0.2A VMT3

Case Package:SOT-23

Datasheet:RZM002P02T2L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Copper, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2009
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	6 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	115pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 4.5V
Rise Time	4ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	0.2A
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free