SCT2H12NYTB

new-10%

Manufacturer part number:SCT2H12NYTB

Manufacturer:ROHM Semiconductor

Description:1700V 1.2 OHM 4A SIC FET

Case Package:SOT-23

Datasheet:SCT2H12NYTB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Surface Mount	YES
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	SiCFET (Silicon Carbide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	44W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 1.1A, 18V
Vgs(th) (Max) @ Id	4V @ 410μA
Input Capacitance (Ciss) (Max) @ Vds	184pF @ 800V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 18V
Drain to Source Voltage (Vdss)	1700V
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -6V
Drain Current-Max (Abs) (ID)	4A
Pulsed Drain Current-Max (IDM)	10A
DS Breakdown Voltage-Min	1700V
RoHS Status	ROHS3 Compliant