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SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 29m Ω @ 6.7A, 4.5V ±8V 1800pF @ 10V 57nC @ 8V 12V PowerPAK® SC-70-6

SOT-23

SIA413DJ-T1-GE3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 29mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-N4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 6.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 8V
Rise Time 40ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 40A
Nominal Vgs -1 V
Height 750μm
Length 2.05mm
Width 2.05mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.44280 $1.3284
6,000 $0.42201 $2.53206
15,000 $0.40716 $6.1074
SIA413DJ-T1-GE3 Product Details

SIA413DJ-T1-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 10V.This device conducts a continuous drain current (ID) of -12A, which is the maximum continuous current transistor can conduct.Using VGS=-12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).

SIA413DJ-T1-GE3 Features


a continuous drain current (ID) of -12A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 40A.
a threshold voltage of -1V
a 12V drain to source voltage (Vdss)


SIA413DJ-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIA413DJ-T1-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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