FQPF9N90CT

new-10%

FQPF9N90CT

Manufacturer part number:FQPF9N90CT

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:FQPF9N90CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.4Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	68W
Case Connection	ISOLATED
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	900V
Avalanche Energy Rating (Eas)	900 mJ
Nominal Vgs	3 V
Height	16.07mm
Length	10.36mm
Width	4.9mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free