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FQPF9N90CT

FQPF9N90CT

FQPF9N90CT

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-220-3 Full Pack

SOT-23

FQPF9N90CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series QFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.4Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 68W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation68W
Case Connection ISOLATED
Turn On Delay Time50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 900 mJ
Nominal Vgs 3 V
Height 16.07mm
Length 10.36mm
Width 4.9mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2029 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.47000$3.47
10$3.09400$30.94
100$2.53730$253.73
500$2.05462$1027.31

FQPF9N90CT Product Details

FQPF9N90CT Description

The FQPF9N90CT is an N-Channel enhancement mode power MOSFET that uses ON Semiconductor's planar stripe and DMOS technology. The FQPF9N90CT MOSFET technology has been specifically designed to lower on-state resistance while also delivering excellent switching performance and avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts can all benefit from FQPF9N90CT MOSFETs.


FQPF9N90CT Features

  • Low Crss ( Typ. 14pF)

  • 100% avalanche tested

  • Low gate charge ( Typ. 45nC)

  • 8.0A, 900V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 4A


FQPF9N90CT Applications

  • Other Industrial

  • Motor drive

  • DC motor control

  • Switch-mode power supplies

  • Audio amplifier

  • DC/DC converters


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