SST2222AHZGT116 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Parts of this part have transition frequencies of 300MHz.The device exhibits a collector-emitter breakdown at 40V.
SST2222AHZGT116 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
SST2222AHZGT116 Applications
There are a lot of ROHM Semiconductor SST2222AHZGT116 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
