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2PB709ASL,215

  • 2PB709ASL,215
  • 2PB709ASL,215

2PB709ASL,215

2PB709ASL,215

Nexperia USA Inc.

2PB709ASL,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PB709ASL,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 70MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PB709A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 290 @ 2mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 80MHz
Max Breakdown Voltage 45V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.174204 $0.174204
10 $0.164344 $1.64344
100 $0.155041 $15.5041
500 $0.146265 $73.1325
1000 $0.137986 $137.986
2PB709ASL,215 Product Details

2PB709ASL,215 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 290 @ 2mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As a result, the part has a transition frequency of 80MHz.An input voltage of 45V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 100mA volts.

2PB709ASL,215 Features


the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 80MHz

2PB709ASL,215 Applications


There are a lot of Nexperia USA Inc. 2PB709ASL,215 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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