US6M2TR

new-10%

Manufacturer part number:US6M2TR

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 30V/20V TUMT6

Case Package:SOT-23

Datasheet:US6M2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2001
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	340MOhm
Terminal Finish	TIN COPPER
Subcategory	Other Transistors
Max Power Dissipation	1W
Peak Reflow Temperature (Cel)	260
Current Rating	1.5A
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*M2
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.5A 1A
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Drain to Source Voltage (Vdss)	30V 20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Nominal Vgs	1.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free