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2ST501T

2ST501T

2ST501T

STMicroelectronics

2ST501T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2ST501T Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Weight 2.299997g
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 100W
Base Part Number 2ST50
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 100W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 2A
Collector Emitter Breakdown Voltage 350V
Voltage - Collector Emitter Breakdown (Max) 350V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 2000
Continuous Collector Current 4A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.46000 $1.46
50 $1.23480 $61.74
100 $1.01430 $101.43
500 $0.83790 $418.95
1,000 $0.66150 $0.6615
2,500 $0.61740 $1.2348
5,000 $0.58800 $2.94
2ST501T Product Details

2ST501T Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 2A 2V.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 350V volts before it breaks down.The product comes in the supplier device package of TO-220AB.Single BJT transistor shows a 350V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 4A volts is possible.

2ST501T Features


the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 2A
the emitter base voltage is kept at 5V
the supplier device package of TO-220AB

2ST501T Applications


There are a lot of STMicroelectronics 2ST501T applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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