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2SAR514P5T100

2SAR514P5T100

2SAR514P5T100

ROHM Semiconductor

2SAR514P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR514P5T100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Reach Compliance Code not_compliant
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 300mA
Collector Emitter Breakdown Voltage 80V
Max Breakdown Voltage 80V
Frequency - Transition 380MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.888026 $0.888026
10 $0.837760 $8.3776
100 $0.790340 $79.034
500 $0.745603 $372.8015
1000 $0.703399 $703.399
2SAR514P5T100 Product Details

2SAR514P5T100 Overview


DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 300mA.This device can take an input voltage of 80V volts before it breaks down.In extreme cases, the collector current can be as low as 700mA volts.

2SAR514P5T100 Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 15mA, 300mA

2SAR514P5T100 Applications


There are a lot of ROHM Semiconductor 2SAR514P5T100 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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