2SAR514P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR514P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Reach Compliance Code
not_compliant
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 300mA
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Frequency - Transition
380MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.888026
$0.888026
10
$0.837760
$8.3776
100
$0.790340
$79.034
500
$0.745603
$372.8015
1000
$0.703399
$703.399
2SAR514P5T100 Product Details
2SAR514P5T100 Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 300mA.This device can take an input voltage of 80V volts before it breaks down.In extreme cases, the collector current can be as low as 700mA volts.
2SAR514P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 400mV @ 15mA, 300mA
2SAR514P5T100 Applications
There are a lot of ROHM Semiconductor 2SAR514P5T100 applications of single BJT transistors.