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2STN2360

2STN2360

2STN2360

STMicroelectronics

2STN2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

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2STN2360 Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.6W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number 2STN
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.6W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Height 1.8mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.321709 $0.321709
10 $0.303499 $3.03499
100 $0.286320 $28.632
500 $0.270113 $135.0565
1000 $0.254824 $254.824
2STN2360 Product Details

2STN2360 Overview


In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 150mA, 3A.The emitter base voltage can be kept at 6V for high efficiency.130MHz is present in the transition frequency.Breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.

2STN2360 Features


the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

2STN2360 Applications


There are a lot of STMicroelectronics 2STN2360 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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