2STN2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STN2360 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.6W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2STN
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.6W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Height
1.8mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.321709
$0.321709
10
$0.303499
$3.03499
100
$0.286320
$28.632
500
$0.270113
$135.0565
1000
$0.254824
$254.824
2STN2360 Product Details
2STN2360 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 150mA, 3A.The emitter base voltage can be kept at 6V for high efficiency.130MHz is present in the transition frequency.Breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.
2STN2360 Features
the DC current gain for this device is 160 @ 1A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 150mA, 3A the emitter base voltage is kept at 6V a transition frequency of 130MHz
2STN2360 Applications
There are a lot of STMicroelectronics 2STN2360 applications of single BJT transistors.