2STN2360 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 150mA, 3A.The emitter base voltage can be kept at 6V for high efficiency.130MHz is present in the transition frequency.Breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.
2STN2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2STN2360 Applications
There are a lot of STMicroelectronics 2STN2360 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
