BULT106D datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BULT106D Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
32W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BULT106
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
32W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 400mA, 2A
Collector Emitter Breakdown Voltage
230V
Emitter Base Voltage (VEBO)
9V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.31000
$1.31
50
$1.11140
$55.57
100
$0.91290
$91.29
500
$0.75412
$377.06
BULT106D Product Details
BULT106D Overview
This device has a DC current gain of 10 @ 1A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.2V @ 400mA, 2A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
BULT106D Features
the DC current gain for this device is 10 @ 1A 5V the vce saturation(Max) is 1.2V @ 400mA, 2A the emitter base voltage is kept at 9V
BULT106D Applications
There are a lot of STMicroelectronics BULT106D applications of single BJT transistors.