BUT70W datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUT70W Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
125V
Max Power Dissipation
200W
Current Rating
7A
Base Part Number
BUT70
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
125V
Max Collector Current
32A
Vce Saturation (Max) @ Ib, Ic
900mV @ 7A, 70A
Collector Emitter Breakdown Voltage
125V
Collector Emitter Saturation Voltage
900mV
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$7.98855
$4793.13
BUT70W Product Details
BUT70W Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 7A, 70A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 7A.Collector current can be as low as 32A volts at its maximum.
BUT70W Features
a collector emitter saturation voltage of 900mV the vce saturation(Max) is 900mV @ 7A, 70A the emitter base voltage is kept at 7V the current rating of this device is 7A
BUT70W Applications
There are a lot of STMicroelectronics BUT70W applications of single BJT transistors.