HD1760JL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
HD1760JL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
HD1760
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
200W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
36A
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 18A 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
2V @ 4.5A, 18A
Collector Emitter Breakdown Voltage
800V
Emitter Base Voltage (VEBO)
10V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
350
$4.90874
$1718.059
HD1760JL Product Details
HD1760JL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5 @ 18A 5V.When VCE saturation is 2V @ 4.5A, 18A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 10V to gain high efficiency.Single BJT transistor is possible for the collector current to fall as low as 36A volts at Single BJT transistors maximum.
HD1760JL Features
the DC current gain for this device is 5 @ 18A 5V the vce saturation(Max) is 2V @ 4.5A, 18A the emitter base voltage is kept at 10V
HD1760JL Applications
There are a lot of STMicroelectronics HD1760JL applications of single BJT transistors.