MD1802FX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
MD1802FX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
57W
Base Part Number
MD1802
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
57W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
5.5 @ 5A 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.25A, 5A
Collector Emitter Breakdown Voltage
700V
Collector Base Voltage (VCBO)
9V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,200
$0.78409
$0.78409
MD1802FX Product Details
MD1802FX Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5.5 @ 5A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.25A, 5A.Keeping the emitter base voltage at 9V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
MD1802FX Features
the DC current gain for this device is 5.5 @ 5A 5V the vce saturation(Max) is 1.5V @ 1.25A, 5A the emitter base voltage is kept at 9V
MD1802FX Applications
There are a lot of STMicroelectronics MD1802FX applications of single BJT transistors.