MD2009DFX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
MD2009DFX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
BUILT-IN BIAS RESISTORS
Subcategory
Other Transistors
Max Power Dissipation
58W
Base Part Number
MD2009
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
58W
Case Connection
ISOLATED
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 5.5A 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 1.4A, 5.5A
Collector Emitter Breakdown Voltage
700V
Emitter Base Voltage (VEBO)
7V
hFE Min
5
Continuous Collector Current
10A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
MD2009DFX Product Details
MD2009DFX Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5 @ 5.5A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.8V @ 1.4A, 5.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 10A to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.
MD2009DFX Features
the DC current gain for this device is 5 @ 5.5A 5V the vce saturation(Max) is 2.8V @ 1.4A, 5.5A the emitter base voltage is kept at 7V
MD2009DFX Applications
There are a lot of STMicroelectronics MD2009DFX applications of single BJT transistors.