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PD55025S-E

PD55025S-E

PD55025S-E

STMicroelectronics

RF MOSFET Transistors POWER RF Transistor

SOT-23

PD55025S-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 4
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Max Power Dissipation 79W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 250
Current Rating 7A
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PD55025
Pin Count 10
JESD-30 Code R-PDSO-F2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection SOURCE
Current - Test 200mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Gain 14.5dB
Max Output Power 25W
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Power Gain 14dB
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $28.64000 $28.64
50 $25.22800 $1261.4
100 $22.55680 $2255.68

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