SCT30N120

new-10%

Manufacturer part number:SCT30N120

Manufacturer:STMicroelectronics

Description:SiCFET (Silicon Carbide) N-Channel Tube 100m Ω @ 20A, 20V +25V, -10V 1700pF @ 400V 105nC @ 20V 1200V TO-247-3

Case Package:SOT-23

Datasheet:SCT30N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Weight	38.000013g
Operating Temperature	-55°C~200°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	SCT30
Number of Channels	1
Power Dissipation-Max	270W Tc
Element Configuration	Single
Power Dissipation	175W
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100m Ω @ 20A, 20V
Vgs(th) (Max) @ Id	2.6V @ 1mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 400V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 20V
Rise Time	20ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -10V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	2.6V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	1.2kV
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free